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Download 2.0 Film in 3D: The Ultimate Sci-Fi Thriller Experience



(a) EELS and (b) SECO spectrum of the MoS2 thin film compared to the spectrum of a MoS2 reference (single crystal); (c) corresponding valence band (VB) region UPS spectrum and (d) energy-level diagram. The energetic positions of the vacuum level (VL), the work function Φ, and VBM relative to the Fermi level EF were determined by UPS measurements, whereas the energy gap Eg was derived by EELS.




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(a) MoxSy nanoclusters in the as-deposited thin film and (b) few-layered crystalline 2D-MoS2 nanosheets in the annealed thin film (amorphous MoS2 matrix is represented in light green); the enlarged view depicts the corresponding atomic arrangement of as-deposited sample and annealed MoS2 thin film, respectively.


The realized ReRAM device with an abrupt ON/OFF ratio of more than two orders of magnitude finally proves the excellent qualities of the MoS2 nanosheet-containing thin film as a semiconductor material for electronic applications. It is important to note that the MoS2 thin film works as a whole and not via single 2D-MoS2 nanosheets. In other words, the dimensions of the metal contacts for device fabrication are large enough to ensure that the electrical behaviour is averaged over an area larger than a single MoS2 nanosheet, proving that the amorphous MoS2 encapsulation is conductive enough for device operation. The device was stable over dozens of cycles and reproducible in terms of retention time over a few days, highlighting the possibility to perform multicycle writing and reset operations. The growth of a stable 3D bulk material with 2D MoS2 properties makes the IJD technique an excellent candidate for practical use in optoelectronic devices.


In contrast to MoS2 grown via other techniques, where an increase in thickness of more than a few layers unavoidably leads to the loss of the desired optical and electronic properties, the MoS2 thin films grown by IJD containing few-layered crystalline 2D-MoS2 nanosheets show properties comparable to few-layer 2H-MoS2 even over a large area and independent on the film thickness. This is due to the encapsulation of the crystalline MoS2 nanosheets (responsible for the 2D properties) in an amorphous MoS2 matrix, forming a mechanically stable two-phase thin film (bulk). The 2D-embedded-in-bulk composition of the thin film ensures easier handling and makes the IJD technique preferential for mass production of electronic devices, where the fabrication process must be simplified as much as possible to guarantee low costs, but at the same time keep high-quality material and production standards.


In addition, the IJD technique enables the possibility to work with selenide-based TMDCs, such as WSe2, NbSe2, etc., ensuring the right composition of the thin films without the need of highly toxic selenium in the gas phase. Different from other deposition techniques, where multi-step processes are required to fabricate TMDC heterostructures, the IJD technique paves the way to one-solution in-situ multi-target deposition for TMDC heterostructures with desired electronic, optical, and magnetic properties.


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2.0 is a 2018 Indian Tamil-language 3D science-fantasy action film[3][34] directed by S. Shankar who co-wrote the film with B. Jeyamohan and Madhan Karky. Produced by Subaskaran under the banner of Lyca Productions. As the second instalment in the Enthiran film series, 2.0 is a standalone sequel to Enthiran (2010), featuring Rajinikanth reprising the roles of Vaseegaran and Chitti the Robot, alongside Akshay Kumar as Pakshi Rajan and Amy Jackson as Nila. also Sudhanshu Pandey, Adil Hussain, Kalabhavan Shajohn, and K. Ganesh appear in supporting roles. The soundtrack is composed by A. R. Rahman, with lyrics written by Madhan Karky and Na. Muthukumar. The film follows the conflict between Chitti, the once dismantled humanoid robot, and Pakshi Rajan, a former ornithologist who seeks vengeance upon cell phone users to prevent avian population decline.